Product Summary
The BSP300 is a SIPMOS small-signal transistor.
Parametrics
BSP300 absolute maximum ratings: (1)Continuous drain current TA = 25 °C ID: 0.19 A; (2)DC drain current, pulsed TA = 25 °C IDpuls: 0.76A; (3)Avalanche energy, single pulse ID = 0.8 A, VDD = 50 V, RGS = 25 W L = 105 mH, T j = 25 °C EAS: 36 mJ; (4)Gate source voltage VGS: ± 20 V; (5)Power dissipation TA = 25 °C Ptot: 1.8 W; (6)Chip or operating temperature T j: -55 to + 150 °C; (7)Storage temperature Tstg: -55 to + 150°C.
Features
BSP300 features: (1)N channel; (2)Enhancement mode; (3)Avalanche rated; (4)VGS(th)= 2.0 to 4.0 V.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() BSP300 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BSP300 E6327 |
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![]() MOSFET N-CH 800V 190MA SOT-223 |
![]() Data Sheet |
![]() Negotiable |
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![]() BSP300 L6327 |
![]() Infineon Technologies |
![]() MOSFET SIPMOS SM-Signal Transistor 800V .19A |
![]() Data Sheet |
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