Product Summary

The CY7C1020DV33-10ZSXI is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. The CY7C1020DV33-10ZSXI has an automatic power-down feature that significantly reduces power consumption when deselected. The CY7C1020DV33-10ZSXI is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Parametrics

CY7C1020DV33-10ZSXI absolute maximum ratings: (1)Storage Temperature : –65°C to +150°C; (2)Ambient Temperature with Power Applied: –55°C to +125°C; (3)Supply Voltage on VCC to Relative GND[4] : –0.5V to +4.6V; (4)DC Voltage Applied to Outputs in High-Z State[4] : –0.5V to VCC + 0.5V; (5)DC Input Voltage[4]: –0.5V to VCC + 0.5V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: > 2001V; (8)Latch-up Current: > 200 mA.

Features

CY7C1020DV33-10ZSXI features: (1)Pin-and function-compatible with CY7C1020CV33; (2)High speed: tAA = 10 ns; (3)Low active power: ICC = 60 mA @ 10 ns; (4)Low CMOS standby power: ISB2 = 3 mA; (5)2.0V Data retention; (6)Automatic power-down when deselected; (7)CMOS for optimum speed/power; (8)Independent control of upper and lower bits; (9)Available in Pb-free 44-pin 400-Mil wide Molded SOJ and 44-pin TSOP II packages.

Diagrams

CY7C1020DV33-10ZSXI pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CY7C1020DV33-10ZSXI
CY7C1020DV33-10ZSXI
Cypress Semiconductor
SRAM 1M 512K IND FAST ASYNC SRAM
Data Sheet
0-1: $3.59
1-25: $3.10
25-100: $2.93
100-250: $2.45
CY7C1020DV33-10ZSXIT
CY7C1020DV33-10ZSXIT
Cypress Semiconductor
SRAM 1M 512K IND FAST ASYNC SRAM
Data Sheet
0-715: $2.33
715-1000: $2.24
1000-2000: $2.16