Product Summary

The FDS6679 is a P-Channel MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

Parametrics

FDS6679 absolute maximum ratings: (1)VDSS Drain-Source Voltage: –30V; (2)VGSS Gate-Source Voltage: ±25V; (3)ID Drain Current: –13A; (4)Power Dissipation for Single Operation: 1.0 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +175℃.

Features

FDS6679 features: (1)–13 A, –30 V. RDS(ON) = 9 mW @ VGS = –10 V RDS(ON) = 13 mΩ @ VGS = – 4.5 V; (2)Extended VGSS range (±25V) for battery applications; (3)High performance trench technology for extremely low RDS(ON) ; (4)High power and current handling capability.

Diagrams

FDS6679 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDS6679
FDS6679

Fairchild Semiconductor

MOSFET SO-8

Data Sheet

Negotiable 
FDS6679AZ
FDS6679AZ

Fairchild Semiconductor

MOSFET -30V P-Channel PowerTrench MOSFET

Data Sheet

0-1: $0.61
1-25: $0.47
25-100: $0.43
100-250: $0.37
FDS6679Z
FDS6679Z

Fairchild Semiconductor

MOSFET SO-8

Data Sheet

Negotiable