(China (Mainland))
Product Summary
The FM25160-S is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. The FM25160-S provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. These capabilities make the FM25160-S ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.
Parametrics
FM25160-S absolute maximum ratings: (1)Ambient storage or operating temperature: -40°C to + 85°C; (2)Voltage on any pin with respect to ground: -1.0V to +7.0V; (3)D.C. output current on any pin: 5 mA; (4)Lead temperature (Soldering, 10 seconds): 300° C; (5)fCK SCK Clock Frequency: 0 to 2.1 MHz; (6)tCH Clock High Time: 200 ns.
Features
FM25160-S features: (1)Organized as 2,048 x 8 bits; (2)High endurance 10 Billion (1010)read/writes; (3)10 year data retention at 85° C; (4)NoDelay™ write; (5)Advanced high-reliability ferroelectric process; (6)Up to 2.1 MHz maximum bus frequency; (7)Direct hardware replacement for EEPROM; (8)Supports SPI Mode 0 (CPOL=0, CPHA=0); (9)Hardware protection; (10)Software protection; (11)10 mA standby current; (12)Industrial temperature -40° C to +85° C; (13)8-pin SOP or DIP.
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