(China (Mainland))
Product Summary
The KM416V4104CSI-L5 is an Extended Data Out Mode CMOS DRAM. The KM416V4104CSI-L5 offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. The KM416V4104CSI-L5 is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.
Parametrics
KM416V4104CSI-L5 absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN,VOUT: -0.5 to +4.6 V; (2)Voltage on VCC supply relative to VSS VCC: -0.5 to +4.6 V; (3)Storage Temperature Tstg: -55 to +150 °C; (4)Power Dissipation PD: 1 W; (5)Short Circuit Output Current IOS: 50 mA.
Features
KM416V4104CSI-L5 features: (1)Extended Data Out Mode operation; (2)2 CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Fast parallel test mode capability; (6)Self-refresh capability (L-ver only); (7)LVTTL(3.3V)compatible inputs and outputs; (8)Early Write or output enable controlled write; (9)JEDEC Standard pinout; (10)Available in Plastic TSOP(II)packages; (11)+3.3V±0.3V power supply.
Diagrams
