Product Summary
The BSP75N is an N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. It is suitable for all kinds of resistive, inductive and capacitive loads in switching applications, μC compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet, replaces electromechanical relays and discrete circuits.
Parametrics
Absolute maximum ratings: (1)Continuous drain source voltage, VDS: 60V; (2)Drain source voltage for short circuit protection, VDS: 36V; (3)Continuous input voltage, VIN: -0.2 to +10V; (4)Peak input voltage, VIN: -0.2 to +20V; (5)Operating temperature range, Tj: -40 to +150℃; (6)Storage temperature range, Tstg: -55 to +150℃; (7)Power dissipation (DC), Ptot: 1.8W.
Features
Features: (1)Logic Level Input; (2)Input protection (ESD); (3)Thermal shutdown with auto restart; (4)Overload protection; (5)Short circuit protection; (6)Overvoltage protection; (7)Current limitation.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSP75NTA |
Diodes Inc. |
Power Switch ICs - Power Distribution Self-Protect 60V Sw |
Data Sheet |
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BSP75N |
Infineon Technologies |
Power Switch ICs - Power Distribution Smart Low Side 1 Ch 60 V 1.8 W |
Data Sheet |
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