Product Summary

The CY62128ELL-45ZXI is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The CY62128ELL-45ZXI also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

Parametrics

CY62128ELL-45ZXI absolute maximum ratings: (1)Storage Temperature: –65℃ to +150℃; (2)Ambient Temperature with; (3)Power Applied: –55℃ to +125℃; (4)Supply Voltage to Ground; (5)Potential: –0.5V to 6.0V (VCC(max) + 0.5V); (6)DC Voltage Applied to Outputs in High-Z State[5, 6]: –0.5V to 6.0V (VCC(max) + 0.5V); (7)DC Input Voltage[5, 6]: –0.5V to 6.0V (VCC(max) + 0.5V); (8)Output Current into Outputs (LOW): 20 mA; (9)Static Discharge Voltage: > 2001V; (10)Latch up Current: > 200 mA.

Features

CY62128ELL-45ZXI features: (1)Very high speed: 45 ns; (2)Temperature ranges: Industrial: -40℃ to +85℃ , Automotive-A: -40℃ to +85℃ , Automotive-E: -40℃ to +125℃ ; (3)Voltage range: 4.5V-5.5V; (4)Pin compatible with CY62128B; (5)Ultra low standby power: Typical standby current: 1 μA, Maximum standby current: 4 μA (Industrial); (6)Ultra low active power: Typical active current: 1.3 mA @ f = 1 MHz.

Diagrams

CY62128ELL-45ZXI logic block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CY62128ELL-45ZXI
CY62128ELL-45ZXI
Cypress Semiconductor
SRAM 1M MOBL ULTRA LO PWR HI SPD IND
Data Sheet
0-1: $2.12
1-25: $1.84
25-100: $1.73
100-250: $1.45
CY62128ELL-45ZXIT
CY62128ELL-45ZXIT
Cypress Semiconductor
SRAM 1M MOBL ULTRA LO PWR HI SPD IND
Data Sheet
0-1: $2.18
1-25: $1.89
25-100: $1.79
100-250: $1.49