M29F400BB-70N6E

M29F400BB70N6E, 4 Mbit, non-volatile memory, 48TSOP, 5 V, 70 ns, 8 μs

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Price:: US $0.90~1.00 / piece [Get Latest Price]

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PartNumber:: M29F400BB-70N6E

Brand:: STMicroelectronics - ST | Pack: TSSOP | D/C: 07+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-24

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Part Number:M29F400BB-70N6E
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Product Summary

The M29F400BB-70N6E is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F400BB-70N6E is fully backward compatible with the M29F400. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block of the M29F400BB-70N6E can be protected independently to prevent accidental Program or Erase commands from modifying the memory.

Parametrics

M29F400BB-70N6E absolute maximum ratings: (1)TA, Ambient Operating Temperature: 0 to 70℃; Ambient Operating Temperature: –40 to 85℃; Ambient Operating Temperature: –40 to 125 ℃; (2)TBIAS, Temperature Under Bias: –50 to 125℃; (3)TSTG, Storage Temperature: –65 to 150℃; (4)VIO, Input or Output Voltage: –0.6 to 6 V; (5)VCC, Supply Voltage: –0.6 to 6 V; (6)VID, Identification Voltage: –0.6 to 13.5 V.

Features

M29F400BB-70N6E features: (1)Single 5 V ± 10% supply voltage for program, erase and read operations; (2)Access time: 45 ns; (3)Programming time: 8 μs per Byte/Word typical; (4)11 memory blocks: 1 Boot Block (Top or Bottom Location); 2 Parameter and 8 Main Blocks; (5)Program/erase controller: Embedded Byte/Word Program algorithm; Embedded Multi-Block/Chip Erase algorithm; Status Register Polling and Toggle Bits; Ready/Busy Output Pin; (6)Erase Suspend and Resume modes: Read and Program another Block during Erase Suspend; (7)Unlock Bypass Program command: Faster Production/Batch Programming; (8)Temporary block unprotection mode; (9)Low power consumption: Standby and Automatic Standby; (10)100,000 program/erase cycles per block; (11)20-year data retention: Defectivity below 1 ppm/year.